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Dr Subhashis Gangopadhyay presented a paper titled “Evolution of Ge quantum dots on clean and H nanopatterned Si(110) surface during annealing: a STM investigation” in 100th Indian Science Congress (ISC), held at Calcutta University, Kolkata, during 3rd-7th January, 2013.

Dr Subhashis Gangopadhyay presented a paper titled "Evolution of Ge quantum dots on clean and H nanopatterned Si(110) surface during annealing: a STM investigation" in 100th Indian Science Congress (ISC), held at Calcutta University, Kolkata, during 3rd-7th January, 2013.