Publications - BITS Pilani

Vipin Joshi

Assistant Professor, Gr-I

Gallium Nitride High Electron Mobility Transistors, Modeling and simullation of next generation power semiconductor devices, Power Semiconductor Devices, TCAD based reliability physics analysis, Wide bandgap semiconductors

Research publications

Peer-reviewed International Journals

Dr. Joshi has contributed 21 publications in highly reputed international journals, with 19 in IEEE Transactions on Electron Devices, 1 in IEEE Transactions on Nanotechnology, and 1 in the Journal of Applied Physics

M. A. Mir*, Vipin Joshi*, R. R. Chaudhuri, M. A. Munshi, R. R. Malik and M. Shrivastava, "Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs," in IEEE Transactions on Electron Devices, vol. 71, no. 9, pp. 5251-5257, Sept. 2024, doi: 10.1109/TED.2024.3427097. (* Equal Contribution)
R. Roy Chaudhuri*, Vipin Joshi*, R. R. Malik and M. Shrivastava, "Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si," in IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 1633-1640, March 2024, doi: 10.1109/TED.2023.3326111. (* Equal Contribution)
Vipin Joshi, R. Chaudhuri, S. D. Gupta, and M. Shrivastava, "Impact of Buffer Capacitance Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si," in IEEE Transactions on Electron Devices, vol. 70, no. 12, pp. 6465-6472, Dec. 2023, doi: 10.1109/TED.2023.3321281.
R. Chaudhuri*, A. Gupta*, Vipin Joshi*, R. R. Malik, S. D. Gupta, and M. Shrivastava, "Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R_ON Behavior in AlGaN/GaN HEMTs - Part I," in IEEE Transactions on Electron Devices, vol. 70, no. 12, pp. 6175-6182, Dec. 2023, doi: 10.1109/TED.2023.3323439. (* Equal Contribution)
R. Chaudhuri*, A. Gupta*, Vipin Joshi*, R. R. Malik, S. D. Gupta, and M. Shrivastava, "Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress Induced Dynamic R_ON Behaviour in AlGaN/GaN HEMTs: Part-II," in IEEE Transactions on Electron Devices, vol. 70, no. 12, pp. 6183-6189, Dec. 2023, doi: 10.1109/TED.2023.3300652. (*Equal Contribution)
R. Malik, Vipin Joshi, R. R. Chaudhuri, S. D. Gupta, and M. Shrivastava, "Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes," in IEEE Transactions on Electron Devices, vol. 70, no. 12, pp. 6211-6216, Dec. 2023, doi: 10.1109/TED.2023.3321864.
Vipin Joshi, Roy Chaudhuri, S. Dutta Gupta and M. Shrivastava, "Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance," in IEEE Transactions on Electron Devices, vol. 70, no. 6, pp. 3011-3018, June 2023, doi: 10.1109/TED.2023.3269409.
Vipin Joshi, S. D. Gupta, R. R. Chaudhuri, and M. Shrivastava, "Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic R_ON in AlGaN/GaN HEMTs," in IEEE Transactions on Electron Devices, vol. 69, no. 11, pp. 6035-6042, Nov. 2022, doi: 10.1109/TED.2022.3209635.
S. D. Gupta*, Vipin Joshi*, R. R. Chaudhuri and M. Shrivastava, "Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG," in IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1608-1611, March 2022, doi: 10.1109/TED.2022.3144378. (*Equal Contribution)
R. Roy Chaudhuri*, Vipin Joshi*, S. Dutta Gupta and M. Shrivastava, "Observations and Physical Insights into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer," in IEEE Transactions on Electron Devices, vol. 69, no. 12, pp. 6602-6609, Dec. 2022, doi: 10.1109/TED.2022.3213627. (*Equal Contribution)
Vipin Joshi, S. D. Gupta, R. Roy Chaudhuri, and M. Shrivastava, “Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs—Part I”, in IEEE Transactions on Electron Devices, vol. 68, no. 1, pp. 72-79, Jan. 2021, doi: 10.1109/TED.2020.3034561.
Vipin Joshi, S. D. Gupta, R. Roy Chaudhuri, and M. Shrivastava, “Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs—Part II”, in IEEE Transactions on Electron Devices, vol. 68, no. 1, pp. 80-87, Jan. 2021, doi: 10.1109/TED.2020.3034562.
Vipin Joshi, S. P. Tiwari, and M. Shrivastava, “Part I: Physical Insight into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs,” in IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 561-569, Jan. 2019. doi: 10.1109/TED.2018.2878770.
Vipin Joshi, S. P. Tiwari, and M. Shrivastava, “Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs,” in IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 570-577, Jan. 2019. doi: 10.1109/TED.2018.2878787.
Vipin Joshi, A. Soni, S. P. Tiwari, and M. Shrivastava, “A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs,” in IEEE Transactions on Nanotechnology, vol. 15, no. 6, pp. 947-955, Nov. 2016. doi: 10.1109/TNANO.2016.2615645.
S. D. Gupta, Vipin Joshi, R. R. Chaudhuri, and M. Shrivastava, "Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R_ON of AlGaN/GaN HEMTs Under Semi-on State," in IEEE Transactions on Electron Devices, vol. 69, no. 12, pp. 6934-6939, Dec. 2022, doi: 10.1109/TED.2022.3212327.
S. D. Gupta, Vipin Joshi, R. Roy Chaudhuri, and M. Shrivastava, “Part I: Physical Insights into Dynamic R_ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs,” in IEEE Transactions on Electron Devices, vol. 68, no. 11, pp. 5720-5727, Nov. 2021, doi: 10.1109/TED.2021.3109847.
S. D. Gupta, Vipin Joshi, R. Roy Chaudhuri, and M. Shrivastava, “Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs—Part II,” in IEEE Transactions on Electron Devices, vol. 68, no. 11, pp. 5728-5735, Nov. 2021, doi: 10.1109/TED.2021.3064531.
S. D. Gupta, Vipin Joshi, R. Roy Chaudhuri, and M. Shrivastava, “Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors”, in Journal of Applied Physics, vol. 130, pp. 015701, 2021, doi: 10.1063/5.0053982.
R. R. Chaudhuri, Vipin Joshi, S. D. Gupta, and M. Shrivastava, “On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs,” in IEEE Transactions on Electron Devices, vol. 68, no. 10, pp. 4869-4876, Oct. 2021, doi: 10.1109/TED.2021.3102469.
S. D. Gupta, A. Soni, Vipin Joshi, J. Kumar, R. Sengupta, H. Khand, B. Shankar, N. Mohan, S. Raghavan, N. Bhat, and M. Shrivastava, “Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlₓTi₁₋ₓO Based Gate Stack Engineering,” in IEEE Transactions on Electron Devices, vol. 66, no. 6, pp. 2544-2550, June 2019, doi: 10.1109/TED.2019.2908960.

Peer-Reviewed IEEE International Conferences

Dr. Joshi has contributed ~15 IEEE international conference publications, with 9 publications in the highly reputed IEEE International Reliability Physics Symposium (IRPS)

R. Roy Chaudhuri, Vipin Joshi, S. S. Wani, S. Karthik, R. R. Malik, and M. Shrivastava, “Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs,” accepted for oral presentation and publication at 2024 IEEE International Reliability Physics Symposium (IRPS), Dallas, Texas, USA
M. A. Mir, A. Thakare, M. A. Munshi, V. Avinash, S. Wani, Z. Khan, R. R. Chaudhuri, S. Karthik, R. R. Malik, Vipin Joshi, M. Shrivastava, “On the role of stress engineering of surface passivation in determining the device performance of AlGaN/GaN HEMTs,” accepted for publication at 2024 IEEE International Reliability Physics Symposium (IRPS), Dallas, Texas, USA
M. A. Munshi, M. A. Mir, Vipin Joshi, R. R. Chaudhuri, Z. Khan, and M. Shrivastava, “Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs”, 2023 45th Annual EOS/ESD Symposium (EOS/ESD), Riverside, CA, USA, 2023, pp. 1-5, doi: 10.23919/EOS/ESD58195.2023.10287745.
R. R. Malik, A. N. Shaji, Jayshree, Z. Khan, M. Bhattacharya, R. R. Chaudhuri, Vipin Joshi, and M. Shrivastava, “Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs”, 2023 45th Annual EOS/ESD Symposium (EOS/ESD), Riverside, CA, USA, 2023, pp. 1-7, doi: 10.23919/EOS/ESD58195.2023.10287740.
Vipin Joshi, S. D. Gupta, R. R. Chaudhuri and M. Shrivastava, "Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer," 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2023, pp. 1-4. doi: 10.1109/IRPS48203.2023.10118195
R. R. Chaudhuri, Vipin Joshi, A. Gupta, T. Joshi, R.R. Malik, M.A. Mir, S.D. Gupta, and M. Shrivastava, "Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences," 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2023, pp. 1-5. doi: 10.1109/IRPS48203.2023.10118255
R. R. Malik, A. N. Shaji, Jayshree, Z. Khan, M. Bhattacharya, R. R. Chaudhuri, Vipin Joshi, and M. Shrivastava, "Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs," 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2023, pp. 1-4. doi: 10.1109/IRPS48203.2023.10117793
M. A. Mir, Vipin Joshi, R. R. Chaudhuri, M. A. Munshi, R. R. Malik and M. Shrivastava, "Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs," 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2023, pp. 1-6. doi: 10.1109/IRPS48203.2023.10117664
H. Raj, Vipin Joshi, R. R. Chaudhuri, R. R. Malik and M. Shrivastava, "Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier Diodes," 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2023, pp. 1-4. doi: 10.1109/IRPS48203.2023.10118069
R. R. Chaudhuri, Vipin Joshi, S. D. Gupta, and M. Shrivastava, “Interaction of hot electrons with Carbon doped GaN buffer in AlGaN/GaN HEMTs: Correlation with lateral electric field and device failure,” 2020 32^nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 341-344, DOI: 10.1109/ISPSD46842.2020.9170160.
S. D. Gupta, Vipin Joshi, R. Roy Chaudhuri, A. K. Singh, S. Guha, and M. Shrivastava, “On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs," 2020 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 2020, pp. 1-4, DOI: 10.1109/IRPS45951.2020.9128226.
S. D. Gupta, Vipin Joshi, B. Shankar, S. Shikha, S. Raghavan, and M. Shrivastava, "UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities," 2019 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2019, pp. 1-5, DOI: 10.1109/IRPS.2019. 8720595.
Vipin Joshi, B. Shankar, S. P. Tiwari, and M. Shrivastava, “Dependence of avalanche breakdown on surface & buffer traps in AlGaN/GaN HEMTs,” 22^nd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, 2017, pp. 109-112.DOI: 10.23919/SISPAD.2017.8085276
A. K. Mahato, D. Bharti, Vipin Joshi, V. Raghuwanshi and S. P. Tiwari, “Comprehensive analysis of TIPS-Pentacene: Polymer blend organic field-effect transistor for device and circuit simulation,” 2017 12^th IEEE Nanotechnology Materials and Devices Conference (NMDC), Singapore, 2017, pp. 194-195. DOI: 10.1109/NMDC.2017.8350553
A. Tyagi, Vipin Joshi and S. P. Tiwari, “A wedge tunnel FET device for larger tunneling area and improved ON current,” 2015 15^th IEEE International Conference on Nanotechnology (IEEE-NANO), Rome, 2015, pp. 913-915. DOI: 10.1109/NANO.2015.7388763

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