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Abhijit Pethe

Associate Professor

Implantable electronics for medical applications, NVM, Nanoelectronics, Neuromorphic computing, on-chip battery
D-213 Department of Electrical and Electronics Engineering
BITS Pilani K.K. Birla Goa Campus
Goa 403726

Publications

  • Fatima, A., Pethe, A., “An RRAM based Neuromorphic Accelerator for Speech based Emotion Recognition”, Neuromorphic Computing Systems for Industry 4.0, Book Chapter, IGI Global, 2023;

  • Fatima, A., Pethe, A., “Embedded System with In-Memory Compute Neuromorphic Accelerator for Multiple Applications”, Smart Embedded Systems: Recent Advances and Applications, Book Chapter, CRC Press: Taylor & Francis Group, 2023;

  • Kar, A., and Pethe A., "Implementing Programmable Multi-leveled Cell ReRAMs for Analog Matrix-Vector Multipliers", Microelectronics Jounral 2022 accepted.

  • Fatima, A., Pethe, A., “Implementation of RRAM based Swish Activation Function and its Derivative on 28nm FD-SOI”, International Electrical Engineering Congress (iEECON), IEEE, 2022; https://ieeexplore.ieee.org/document/9741701

  • Fatima, A., Pethe, A., “Periodic Analysis of Resistive Random Access Memory (RRAM) based Swish Activation Function”, Springer Nature Computer Science Journal, 2022; https://doi.org/10.1007/s42979-022-01059-3

  • A. Fatima and A. Pethe, "NVM Device based Deep Inference Architecture using Self-Gated Activation Functions", Int. Conference on Machine vision and Augmented Intelligence (MAI), Sringer 2021 https://doi.org/10.1007/978-981-16-5078-9_4

  • A. Verma and A. Pethe, "Modelling and Analysis of Multi-Junction Photovoltaic Cells," 2020 IEEE 17th India Council International Conference (INDICON), 2020, pp. 1-6, doi: 10.1109/INDICON49873.2020.9342293

  • A. Lee, A. Pethe, A. Joshi, G. Bouche, S. Koh, H. Nimii, S. Majumdar, Z. Hong, N. Fuchigami, I. Lim, A. Bodke, M. Raymond, P. Besser and S. Barstow, “ Impact of thermal treatments on the Schottky barrier height reduction at the Ti-TiOx-Si interface for contact resistance reduction”, Si Nanoelectronics Workshop, 2014

  • D. Kuzum, A.J. Pethe, T, Krishnamohan, Saraswat K.C., “Ge (100) and (111) N- and PFETs with high mobility and low-T mobility characterization”, IEEE Transactions on Electron Devices, 56, 2009 pp. 648-655

  • D. Kuzum, T. Krishnamohan, A. Pethe, Y. Oshima, Y. Sun, J. McVittie, PA. Pianetta,PC. McIntyre, K.C. Saraswat, “Ge Interface passivation techniques and thermal stability”,ECS Transactions, 16, 2008 pp. 1025-1029

  • K.C. Saraswat, D. Kim, T. Krishnamohna, D. Kuzum, A.K. Okyay, A. Pethe, H. Y. Yu, “Germanium for high-performance MOSFETs and optical interconnects”, ECSTransactions, 16, 2008 pp. 3-12 Invited

  • D. Kuzum, T. Krishanmohan, A.J. Pethe, A.K. Okyay, Y. Oshima, Y. Sun, J. P McVittie, P. A. Pianetta, P. C. McIntyre and K. C. Saraswat, “Ge-interface engineering with ozone oxidation for low interface-state density”, IEEE Electron Device Letters, 29, 2008 pp. 328-330

  • K.C. Saraswat, D. Kim, T. Krishnamohan and A. Pethe, “Performance Limitations of Si bulk CMOS and alternatives to future ULSI”, ECS Transactions 2008, 8 pp. 9-14 Invited

  • D. Kuzum, A. J. Pethe, T. Krishnamohan, Y. Oshima, y. Sun, J. P. McVittie, P. A. Pianetta, P.C. McIntyre and K. C. Saraswat, “Interface-Engineered Ge (100) and (111) Nand P-FETs with High Mobility”, IEDM, 2007 Washington D.C.

  • A.K. Okyay, A. J. Pethe, D. Kuzum, S. Latif, D. A. B. Miller and K. C. Saraswat, "Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared", OFC/NFOEC conference, Los Angeles, March 2007.

  • Ali K. Okyay, A. J. Pethe, D. Kuzum, S. Latif, D. A. Miller, K. C. Saraswat, "Novel Si-Based Optoelectronic Switching Device: Light to Latch," CLEO/QELS 2007, Baltimore, Maryland, May 6-11, 2007.

  • A.K. Okyay, A. J. Pethe, D. Kuzum, S. Latif, D. A. Miller and K.C. Saraswat, “SiGe optoelectronic metal-oxide semiconductor field effect transistor”, Optics Letters, Vol. 32,Iss. 14, pp. 2022-2024.

  • A. Pethe and K. Saraswat, "High Mobility, Low Parasitic Resistance Si/Ge/Si Heterostructure Channel Schottky Source/Drain PMOSFETs," IEEE Device Research Conf., South Bend, Indiana, June 2007

  • A. Pethe and K. C. Saraswat, "Interface state Density measurement at GeOxNy-Ge interface for Ge MIS Application,” IEEE SISC, Dec. 2006.

  • A. Pethe, T. Krishnamohan, D. Kim, S. Oh, H.-S.P. Wong, Y. Nishi and K. Saraswat, "Investigation of the Performance Limits of III-V Double-Gate NMOSFETs", 16th Biennial University/Government/Industry Microlectronics Symposium, San Jose, CA 2006. Invited

  • K. C. Saraswat, C. O. Chui, T. Krishnamohan, D. Kim, A. Nayfeh and A. Pethe, "High Performance Germanium MOSFETs", Symp. B, E-MRS IUMRS ICEM Spring Meet., Nice (France), May 29 - June 2, 2006. Published in Materials Science and Engineering: B, Vol. 135, No. 3, 15 Dec. 2006, pp.242-249. Invited

  • K. C. Saraswat, C. O. Chui, T. Krishnamohan and A. Pethe, "High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs," IEEE Int. Electron Dev. Meet. San Francisco, Dec. 2006. Invited

  • A.J.Pethe, T. Krishnamohan, D. Kim, S. Oh, H.-S.P. Wong, Y. Nishi and K. Saraswat, "Investigation of the Performance Limits of III-V Double-Gate NMOSFETs", IEEE International Electron Devices Meeting (IEDM) 2005 Technical Digest, pp. 619-622, Washington, D.C., Dec. 2005.

  • A. Pethe, T. Krishnamohan, K. Uchida, K. C. Saraswat, "Analytical Modeling of Ge and Si Double-Gate(DG) NFETs and the Effect of Process Induced Variations (PIV) on Device Performance," IEEE SISPAD, Sept. 2004.