Associate Professor, Department of Electrical & Electronics Engineering, BITS Pilani, Pilani Campus
[1] “A process for fabricating an undoped transition metal oxide (TMO) based p-n homojunction diode with high rectification efficiency”, Inventors: Partha Bhattacharyya and Arnab Hazra, Patent Number: LP 341257 (581/KOL/2015), Granted on 13/07/2020
[2] “A Process for Forming a TiO2 Nanotube based Room Temperature (27°C) Alcohol Sensor Device” , Partha Bhattacharyya and Arnab Hazra, [Indian patent], File No. 1285/KOL/2014, Filing date: 11.12.2014 (First examination report received)
[3] “A Process for Forming an Undoped p-type TiO2 based Sensor Device for Accurate Sensing of Low ppm Ethanol at Low Temperature”, Partha Bhattacharyya and Arnab Hazra, [Indian patent], File No. 1286/KOL/2014, Filing date: 11.12.2014 (First examination report received)
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