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Dr. Subhashis Gangopadhyay

Professor, Department of Physics,
BITS Pilani, Pilani Campus

Experimental Solid State Physics
Department of Physics, Birla Institute of Technology & Science, Pilani- 333031, Rajasthan. India.

Research Interest

My research area mostly involved in the field of surface nanoscience of metal and semiconductor nanostructures. More precisely, I am interested in studying the growth, surface structure, morphology, chemistry and manipulation of various semiconductor and metal surfaces down to atomic scale. Vacuum assisted physical growth process of various metal oxide semiconductors based nanostructure leading towards their growth optimization related to various gas sensing properties have recently been explored. Expertise in ultra high vacuum (UHV) technology as well as hands on experiences with various vacuum assisted physical vapour deposition methods (thermal and e-beam evaporation, sputtering) and surface characterization techniques (XRD, SEM, XPS, TEM, SPM, LEED) related to thin film technology have widely been explored. Adsorption of organic molecules on metal/semiconducting surfaces (C60/Si, Porphyrins/Au) and their controlled formation of supra-molecular networks stabilized via various inter-molecular forces cover a decent part of my earlier research. In addition, self-assembled growth of various semiconductor nanostructures (Ge/Si, InGaN/GaN, SiN/Si) and their surface characterization was also a significant part of my research work. Apart from in lab facilities,  synchrotron light source based experiments (Elettra, Italy; Hasylab, DESY, Germany) have also been performed. 

 

PhD Students

 
1. Dr. Sumita Chaudhury (Completed)
 
2. Mr. Sushil (Ongoing)
 
3. Mr. Sri Aurobindo Panda (Ongoing)
 
4. Ms. Arti Saini (Ongoing)
 

 

Selective Experimental Skills

  • Variable temperature (VT) and low temperature (LT) STM and AFM (q-plus)under UHV
  • Photoemission spectroscopy (XPS, UPS,AES)
  • Low-energy electron diffraction (LEED) and microscopy (LEEM),  
  • MBE growth, e-beam and thermal evaporation, UHV ( 10-11 mbar), cryogenic (L-N2, L-He)
  • RF and ECR nitrogen plasma, Ar+ sputtering, mass spectrometer
  • Ballistic electron emission microscopy (BEEM) and spectroscopy (BEES)
  • Preparation of Pt/Ir and W tips for STM studies using electrochemical etching 

 

Synchrotron based experiences

  • Elettra synchrotron light source, Triest, Italy:
  • LEEM) and XPEEM at the Nanospectroscopybeamline.
  • X-ray photoemission microscopy and spectroscopy at the ESCA -microscopy beamline
  • Grazing incidence small angle X-ray scattering (GISAXS) at the SAXS beamline
  • HASYLAB, DESY, Hamburg, Germany:
  • Grazing incidence X-ray diffraction (GIXRD) at the BW1 beamline